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In secondary ion mass spectrometry (SIMS), a sample is bombarded with a primary beam of ions. Secondary ions are emitted from the sample surface and these are mass analysed to produce mass spectra and chemical maps (see Note 1). The technique provides detailed surface chemical information; elements, chemical groups, molecules, polymer groups. ToFSIMS analysis can be carried out routinely under static conditions, using such low primary ion doses that the sample is effectively undamaged by the analysis. It is also highly surface sensitive where, in the static regime. The sampling depth is typically 1-2nm. ToFSIMS is analytically very sensitive (often trace detection levels) but it is not quantitative. Its chemical specificity, however, may be exploited in a semi-quantitative manner where variations in the surface concentrations of different chemical species may be followed by monitoring changes in the relative intensities of their diagnostic ToFSIMS signals. High resolution ToFSIMS ‘resolves’ the problem of overlapping peaks of secondary ions with the same nominal mass and promotes the technique into the level of accurate mass measurement which is often necessary for the identification of secondary ion signals. High resolution is also important for improved analytical sensitivity since the practical detection limits of some species are restricted by mass overlap. Note 1: A selected area on the sample can be scanned in spectrum-per-point mode. A mass spectrum is acquired at each pixel point for the field of view and the resulting two-dimensional array of spectra is stored. Retrospectively, a number of operations can be performed, including:
The retrospective feature is particularly useful since it allows data to be analysed/re-analysed at a later date and ROI spectra from different regions of a sample can be produced or different chemical maps can be created, without the need for re-analysing the sample in real time.
[Article: Organic and molecular imaging by ToFSIMS—at the cutting edge]. |
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