Dynamic SIMS (DSIMS) provides semi-quantitative information on the elemental composition of the sample surface region from a few nm to several hundreds of microns in depth. The detection sensitivity of the technique is in the ppm - ppb range for all elements in the periodic table.

In Dynamic SIMS a primary ion beam of energy 0.5keV - 20keV is used to sputter-remove successive layers of the sample in a well-defined area ranging in size from typically 1mm x 1mm to 10 x 10 microns. The emitted positive and negative secondary ions are collected and mass analysed in a mass spectrometer.  The secondary ion currents are representative of the sample composition and with appropriate use of standard samples can be used to produce quantitative information on the lateral and depth distribution of major elements, dopants and impurities in any solid material.

The primary beam can be O2⁺, O^-, Cs⁺, or Ar⁺.  O2⁺ is used for the detection of electropositive species and Cs⁺ for electronegative species.  For example, analysis for boron and sodium in silicon would be carried out with O2⁺ while detection of oxygen and carbon in GaAs would require Cs⁺.

Several types of analytical information can be generated, including :-