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Quality Control

Knowing where dopants are in relation to the overall device is essential in ensuring the quality of devices is maintained.

Depth profiling techniques such as SIMS, SNMS and XPS can be utilised to monitor dopant species/implants with depth whilst VPD techniques can look at the composition of the whole surface- either side of a wafer.

Whether analysing low energy implants, looking to quantify the layer composition of a device or determine surface composition surface and depth profiling can provide the answer.


Next Steps
Quality Control
Research & Development
Example Reports
Examples
Gate Dielectrics - Oxynitrides
Quantification of N using Nuclear Reaction Analysis (NRA)
Quantitative SNMS Depth Profiling of a MoS/Ti Multilayer