You are here: Home » Industries » Semiconductors » Quality Control » Gate Dielectrics - Oxynitrides

Gate Dielectrics - Oxynitrides

Gate Dielectrics - Oxynitrides Characterisation of the new generationof ultra-thin oxynitride gate dielectrics requires determination of the nitrogen distribution within a ~2nm insulating layer. (Typical SIMS analysis: 250eV Cs+ at oblique incidence).




CERAM Surface and Materials Analysis
Queens Road, Penkhull, Stoke-on-Trent, Staffordshire ST4 7LQ, United Kingdom
Customer Enquiries: +44 (0)845 026 0902   Switchboard: +44 (0)1782 764269
Fax: +44 (0)1782 412331 Email: enquiries@ceram.com
Road Directions | Legal Information
CERAM Surface and Materials Analysis is a division of CERAM Research Ltd