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Low Energy Boron Implants in Si

Low Energy Boron Implants in Si Low energy implants are a fundamental component of a rapidly emerging generation of devices. Accurate determination of junction depth and retained dose requires the use of low-energy ions for SIMS depth profiling. This is an example of SIMS characterisation of an anneal sequence on a 1keV boron implant in silicon using 500eV O2+ primary ions.




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